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MRAM technology offers the opportunity to provide all the advantages of the most popular types of memory, such as DRAM, SRAM and FLASH with none of its disadvantages. Magnetic tunnel junctions (MTJs) based on CoFeB/MgO/CoFeB structures are very promising for future spintronics, especially in MRAM memory operation due to its high tunnel magnetoresistance (TMR) and reasonable range of resistance area...
The time-dependent dielectric breakdown phenomenon (TDDB) has been investigated in a series of nominally identical MgO based magnetic tunnel junctions (MTJs) by pulsed voltage endurance test. Results from the pulsed endurance test reveal that the breakdown voltage is dependent on the polarity of the applied voltage. MTJs with “UP” current stress (Iup) (flowing from reference layer (RL) to free layer...
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