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In this work, we explored a novel technique for the formation of ultra-shallow p+/n and n+/p junctions on Ge substrate using the spin-on dopant (SOD) followed by laser annealing (LA). The junction depth and doping profiles were extracted and compared between Ge junctions activated by LA and by the conventional rapid thermal annealing (RTA). It is experimentally confirmed that the process of SOD followed...
Experiments on internal photoemission of electrons at interfaces of SiyGe1−x−ySnx binary and ternary alloys (0≤x≤0.11; 0≤y≤0.19) with amorphous insulating Al2O3 reveal that the application of an additional oxidation step (5min in dry O3 at 300°C) after atomic layer deposition of first ≈1nm of alumina results in a significant increase of the electron barrier height (by ≈0.4–0.5eV) as compared to the...
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