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The interface traps at the 4H-SiC/SiO 2 interface are studied using thermally stimulated current (TSC) and CV-techniques. We demonstrate that the electron traps near the 4H-SiC conduction band edge at the 4H-SiC/SiO 2 interface are composed of two groups of trapping levels differing by their mechanisms of the electron exchange with the semiconductor. These two groups of traps are found...
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