In this work an easy method for determining the cadmium and tellurium excess in CdTe samples is presented. The technique showed an accuracy of better than 0.001at.%, which is two orders of magnitude better than was previously reported.The technique is based on a detailed analysis of Cd and Te 2 partial vapour pressures in equilibrium with CdTe samples at high temperatures. The partial pressures are determined by separately measuring the optical absorption of the vapours at the wavelengths of a He-Cd laser source (326 and 442nm). The results of measurements of both Cd and Te-rich samples will be presented.