We report on a comparative optical study of InGaN:Eu quantum dots (QDs) and GaN:Eu layer grown by molecular beam epitaxy (MBE). Analysis of the 5 D 0 → 7 F 2 transition as a function of the excitation wavelength shows that Eu 3+ ions in InGaN:Eu QDs are located inside InGaN QDs and also in the GaN barrier layer. The existence of Eu 3+ ions in the GaN barrier layer is explained by Eu segregation/diffusion during growth. For Eu 3+ ions located inside InGaN QDs the photoluminescence (PL) shows only a slight decrease with temperature from 5K to 300K. In contrast, the PL from Eu 3+ ions in the GaN barrier layer or in GaN thick layer shows a much more pronounced thermal quenching.