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Li3V2(PO4)3/C is prepared by an improved sol-gel method and then modified with various amounts of Ti3SiC2 by a suspension mixing process. This process allows Li3V2(PO4)3/C platelets to attach on the surface of nanolaminated Ti3SiC2 particles, creating an integrated conductive network. Such superior structure brings a significant improvement in initial discharge capacity, rate performance and cycle...
Silicon dioxide (SiO2) films are deposited by atomic layer deposition (ALD) at low temperatures from 100 to 200°C using di-isopropylaminosilane (SiH3N(C3H7)2, DIPAS) as the Si precursor and ozone as the reactant. The SiO2 films exhibit saturated growth behavior confirming the ALD process, showing a growth rate of 1.2Å/cycle at 150°C, which increases to 2.3Å/cycle at 250°C. The activation energy of...
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