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With the continuously changing landscape of the computer technologies, a new memory type is needed that will be fast, energy efficient and long-lasting. It shall combine the speed of random access memory (RAM) and non-volatile in the same time. Resistive RAM (RRAM) is one of the most promising candidates in this respect. RRAM has attracted a great deal of attention owing to its potential as a possible...
Electrical conduction mechanism and bipolar resistive switching properties of the manganese oxide thin films resistive random access memory (RRAM) devices for high resistive status and low resistive status (HRS/LRS) were investigated and discussed. The electrical and physical properties of post-treatment manganese oxide thin films for different oxygen concentration parameters were measured by x-ray...
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