In this study, changes in the surface morphology of single crystalline Si during chemical dry etching using F radicals and direct-injected nitric oxide (NO) gas were investigated. When NO gas was injected into a chamber supplied with F radicals from NF 3 input gas generated from a remote plasma source, the single crystalline Si surface was textured and roughened during the chemical dry etching. It was found that the roughened morphology varied as a function of the NO gas flow rate, the total gas flow rate of NF 3 and NO gases, and the etching time. The roughened morphology that developed during the fast chemical dry etching of silicon led to a reduction in the reflectance of visible light.