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Etching in molten KOH is a usual method to reveal the defect density across a SiC wafer. Time stabilised etching rates are desirable for an objective assessment of the defect density via etch pit counting. The expected rate stabilising effect of oxygen, released from an addition of 2wt% KNO 3 was not found. The observed increase of the etching rate with time in purely molten KOH could be masked...
In this work, we present recent results on development and production of n-type 4H bulk material. From previous studies it is evident that inclusions of foreign polytypes can act as origin of severe structural imperfections [N. Schulze, D.L. Barret, G. Pensl, S. Rohmfeld, M. Hundhausen, Mater. Sci. Eng. B 61–62 (1999) 44; D. Hofmann, E. Schmitt, M. Bickermann, M. Kölbl, P.J. Wellmann, A. Winnacker,...
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