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Thermodynamic analysis of the effects of hydrogen addition to the growth ambient during physical vapor transport growth of SiC is presented. In the presence of hydrogen, the efficiency of carbon transport should greatly improve due to the interaction between hydrogen and graphite resulting in formation of hydrocarbons and due to more congruent evaporation of the SiC source material. The changes induced...
A novel halide chemical vapor deposition process has been developed for growth of single crystal 6H and 4H SiC boules. This process takes advantage of the thermal stability of halogenated precursors and a unique reactor design to produce SiC crystals up to 75mm in diameter at growth rates up to 250mm/h. Growth rate was significantly improved by using CH 4 instead of C 3 H 8 ...
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