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An Fe-doped thick GaN layer was grown by hydride vapor-phase epitaxy on a (111)A GaAs starting substrate. By removing the GaAs substrate, a 400-μm-thick (0001) GaN substrate having a smooth surface and an Fe concentration of 1.5×10 19 cm −3 was obtained. X-ray diffraction rocking curves of the (0002) and (101¯0) planes of the GaN substrate had narrow full-widths at half-maximum of...
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