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Ga melts were heated in a boron nitride crucible at 800°C and 5MPa of N 2 for 8–200h with Na vapor. Colorless and transparent prismatic GaN single crystals grew from a Na–Ga melt which was formed by dissolution of Na from the gas phase. Nitrogen was probably introduced into the melt with Na. The time dependence of the Na fraction (r Na =Na/(Na+Ga)) in the melts and the yields of GaN...
Crystal growth rate depends on both diffusion and surface reaction. In industrial crystallizers, there exist conditions for diffusion-controlled growth and surface reaction-controlled growth. Using mathematical modelling and experimental information obtained from growth studies of single crystals, it is possible to separate these phenomena and study how they are affected by concentration, slip velocities...
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