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A heteroepitaxially grown layer with a lattice constant different from that of substrate is subject to strain. If this strain cannot be released by misfit dislocations or surface undulation a pseudomorphic strained layer with lattice relaxation in growth direction will be formed. A simple model has been outlined to involve this strain energy into liquid–solid phase equilibrium calculations. The calculations...
Triple-axis X-ray diffraction (TAD) along with synchrotron radiation double-crystal topography (SRDT) is first time employed to investigate Si/SiGe/Si heterostructures on a bonded silicon-on-insulator (SOI) wafer. (004) TAD measurements present the crystallographic misalignment of the whole structure and the two diffraction peaks from the Si layers (i.e. the Si capping layer, the Si buffer and the...
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