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GaN bulk crystals grown by Hydrate Vapor Phase Epitaxy (HVPE) contain regions with non-homogenous electrical properties. Kelvin Probe Force Microscopy (KPFM) was used for revealing and analysis of these defects in thick GaN layers grown by this method on top of GaN on sapphire templates. Such layers initially grow in the form of separate pyramids, which are later overgrown, creating microscopically...
Quasi-phase-matched GaAs layers up to 600μm thick have been produced by low-pressure hydride vapor phase epitaxy (HVPE) regrowth on templates fabricated using wafer fusion bonding. We have used this combination of techniques to demonstrate an alternative approach for commercial development of orientation-patterned GaAs (OP-GaAs) for nonlinear optical frequency conversion applications. We report on...
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