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Commercial detector-grade cadmium zinc telluride (CZT) crystals still suffer from various types of extended defects, e.g., dislocations, micro-grains, grain boundaries, and Te-rich secondary phases. Most of these defects cannot readily be identified and characterized using conventional techniques, though they are believed to be the dominant factor causing non-uniformity in the detector response. In...
Thermal etching effect of GaN during growth interruption in the metalorganic chemical vapor deposition reactor was investigated in this paper. The thermal etching rate was determined by growing a series of AlGaN/GaN superlattice structures with fixed GaN growth temperature at 735°C and various AlGaN growth temperature changing from 900°C to 1007°C. It was observed that the GaN layer was etched off...
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