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We investigated the etching effect of tertiary-butyl chloride (TBCl) during InP nanowire (NW) growth for the purpose of improving the tapering shape at high growth temperature. The vapor–liquid–solid method was performed by using 10-nm-diameter Au particles for NW growth. The InP NW length doubled when TBCl was supplied at the same flow rate as TMIn and decreased gradually with increasing TBCl flow,...
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