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N-type 4H-SiC crystals were grown by the physical vapor transport (PVT) method with nitrogen and aluminum (N–Al) co-doping. By using aluminum carbide powder preannealed in nitrogen gas atmosphere as an aluminum doping source, we obtained highly N–Al co-doped crystals with a nitrogen concentration higher than that in nitrogen-only-doped crystals. The dislocation densities of N-Al co-doped crystals...
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