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Trimethyl aluminium (TMA) was used as an intrinsic dopant source to grow highly p-doped AlGaAs by chemical beam epitaxy (CBE). Growth parameters were varied to control doping level, and three sets of growth parameters were identified to maximize the hole concentration in CBE-grown AlGaAs: low temperature growth; low V/III ratio combined with high growth rate; aluminium-rich composition. AlGaAs/GaAs...
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