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The formation of misfit dislocations (MDs) at InAs/GaAs(001) interface is theoretically investigated using empirical interatomic potentials and ab initio calculations. The calculated cohesive energy using empirical interatomic potentials demonstrate that InAs/GaAs(001) system with 5/7 MD core structure is stabilized compared with coherently grown system when the thickness of InAs wetting layer is...
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