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Growth interruption during the formation of InAs quantum dots (QDs) on a GaAs (100) substrate has been investigated in detail. A total of 1.9 mono layers (MLs) of an InAs QD nucleation layer was grown continuously to form a seed with high density. Further, the supply of up to 3MLs of InAs with a growth interruption of 15s for every 0.11ML showed that photoluminescence intensity was improved by 23...
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