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We present the molecular beam epitaxy (MBE) fabrication of GaAs ring/disk nanostructures. In this system, a central quantum ring is surrounded by a flat outer disk-like region, which is developed following a layer-by-layer growth mode. We studied the influence of the growth temperature on the morphology of these nanostructures and found out a pronounced dependence only for the outer region diameter,...
Vapor–liquid–solid condensation was utilized to fabricate zinc-blende GaN quantum dots on 3C-AlN (001) in a molecular beam epitaxy system. By adjustment of deposition parameters and nitridation procedure the density of the quantum dots was controllable in the range of 5×10 8 –5×10 12 cm −2 . The quantum dots in the range of 8×10 10 –5×10 12 cm −2 have...
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