Journal of Crystal Growth

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Crystal growth and optical propertiesof Ti ³ ⁺ : YAl ₃ (BO ₃ ) ₄ and Ti ³ ⁺ : GdAl ₃ (BO ₃ ) ₄

T.P.J. Han, H.G. Gallagher, B. Henderson, G. Wang

Journal of Crystal Growth > 1997 > 181 > 1-2 > 48-54

Large single crystals of Ti ³ ⁺ -doped YAl ₃ (BO ₃ ) ₄ (YAB) and GdAl ₃ (BO ₃ ) ₄ (GAB) have been prepared by top-seeded solution growth (TSSG) from a K ₂ Mo ₃ O ₁ ₀ -B ₂ O ₃ flux, using a cooling rate of 2.4° C/day and rotation rate of 6 rpm in a pure N ₂ atmosphere. The optical properties...

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Transition of octacalcium phosphate to hydroxyapatite in solution at pH 7.4 and 37°C

M. Iijima, H. Kamemizu, N. Wakamatsu, T. Goto, more

Journal of Crystal Growth > 1997 > 181 > 1-2 > 70-78

Transition of octacalcium phosphate (OCP) to apatite was studied under the condition where Ca ² ⁺ ions were continuously supplied to the reacting solution at pH 7.4 and at 37°C. OCP crystals were grown and subsequently converted into apatite by discontinuing of Ca addition. The rectangular (1 0 0) blades of OCP crystals developed notches on their short edges in the early stage of transition...

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Crystallographic analyses of lysozyme and collagenase microgravity grown crystals versus ground controls

M. Riès-Kautt, I. Broutin, A. Ducruix

Journal of Crystal Growth > 1997 > 181 > 1-2 > 97-108

Hen egg white lysozyme and collagenase from Hypoderma lineatum larvae have been used as model proteins of known physical and chemical properties to study the influence of microgravity on crystal quality. This was performed using the Advanced Protein Crystallization Facility instrument during two successive missions of the US Space Shuttle. Lysozyme crystals were grown during the SpaceHab-01 mission...

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Silicon doping of InGaAs grown by MOVPE using tertiarybutylarsine

X.G. Xu, Ch. Giesen, M. Heuken, K. Heime, more

Journal of Crystal Growth > 1997 > 181 > 1-2 > 26-32

Silicon doping of InGaAs with disilane by low pressure metalorganic vapor phase epitaxy (MOVPE) using tertiarybutylarsine (TBAs) as the group V source has been investigated. The dependence of carrier concentration on the substrate temperature, V/III ratio and reactor pressure was studied. The carrier concentration increases linearly with the ratio of molar fraction of disilane to group III sources...

article

Crystallogenesis studies in microgravity with the Advanced Protein Crystallization Facility on SpaceHab-01

M. Riès-Kautt, I. Broutin, A. Ducruix, W. Shepard, more

Journal of Crystal Growth > 1997 > 181 > 1-2 > 79-96

The Advanced Protein Crystallization Facility (APCF), a new protein crystallization device developed by ESA for the IML-2 Mission in 1994, was tested in its maiden flight on STS-57 Mission in SpaceHab-01 with a physico-chemical experiment on lysozyme crystallization. In pre-flight ground experiments, prior to the Shuttle Mission, the protocol for lysozyme crystallization with NaCl was based on its...

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In situ and real-time observation of the formation and dynamics of a cellular interface in a succinonitrile-0.5 wt% acetone alloy directionally solidified in a cylinder

H. Jamgotchian, N. Noël, B. Billia

Journal of Crystal Growth > 1997 > 181 > 1-2 > 117-132

In situ and real-time observation of the solid-liquid interface during upward Bridgman growth of succinonitrile-0.5 wt% acetone in a cylinder was carried out. This first article concentrates on the study of the emergence and building of nonplanar patterns. By observation under white light in the solidification direction, bright held images and video records of the interface microstructure were obtained,...

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Growth of ZnO single crystal thin films on c-plane (0 0 0 1) sapphire by plasma enhanced molecular beam epitaxy

Y. Chen, D.M. Bagnall, Z. Zhu, T. Sekiuchi, more

Journal of Crystal Growth > 1997 > 181 > 1-2 > 165-169

ZnO single crystal thin films were grown by plasma enhanced molecular beam epitaxy on (0 0 0 1) sapphire. The growth modes of ZnO epilayers were investigated by reflection high-energy electron diffraction. A transition from two-dimensional nucleation to three-dimensional nucleation is found at the initial growth stage. Optical properties of the films, studied by photoluminescence spectroscopy, exhibit...

article

Oxygen nonstoichiometry in copper iron oxide [CuFeO ₂ ₊ _δ ] single crystals

T.R. Zhao, M. Hasegawa, H. Takei, T.-R. Zhao

Journal of Crystal Growth > 1997 > 181 > 1-2 > 55-60

Compositional, structural, and density measurements have been carried out on CuFeO ₂ ₊ _δ single crystals grown under surrounding atmospheres of CO ₂ , Ar, and Ar containing oxygen (Ar + 0.5% O ₂ , Ar + 1% O ₂ , and Ar + 2% O ₂ ) by means of the traveling Cu ₂ O-solvent floating-zone method. The crystal grown in Ar + 0.5% O ₂ atmosphere...

article

Influence of substrate misorientation on quality of active region and performance of GaAs/AlGaAs triple-quantum-well lasers grown by molecular beam epitaxy

D.H. Zhang, S.F. Yoon, C.Y. Li

Journal of Crystal Growth > 1997 > 181 > 1-2 > 1-8

The influence of substrate misorientation on the quality of the active region with low AlAs portion barrier layers and the performance of the GaAs/AlGaAs grade index separate-confinement triple-quantum-well lasers grown under at a higher CO pressure are investigated. It is found that the threshold current could be reduced from 32.5 to 15.7 mA by tilting the substrate 6° and the high-quality lasers...

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Study of Zn diffusion into CaSb from the vapour and liquid phase

A.W. Bett, S. Keser, O.V. Sulima

Journal of Crystal Growth > 1997 > 181 > 1-2 > 9-16

In order to develop a simple and reproducible method to fabricate p-n structures on GaSb for optoelectronic devices, the Zn-diffusion into n-doped GaSb substrates was studied. Two methods of Zn-diffusion were experimentally investigated: (a) diffusion from the vapour phase in a pseudo-closed box system and (b) diffusion from the liquid phase from a Ga-SbZn melt. The process parameters, which provide...

article

Oxygen solubility in Si melts: Influence of boron addition

K. Abe, T. Matsumoto, S. Maeda, H. Nakanishi, more

Journal of Crystal Growth > 1997 > 181 > 1-2 > 41-47

The influence of boron addition on oxygen solubility in silicon melts has been investigated. It was found that the oxygen concentration increases from 2 10 ¹ ⁸ to 4 10 ¹ ⁸ atoms/cm ³ with increasing boron concentration in silicon melts from nondoped to 5 10 ² ⁰ atoms/cm ³ . Boron atoms gather oxygen atoms by weak attraction in boron-doped...

article

Influence of convection on the selection of solidification microstructures at low growth rates

M.D. Dupouy, B. Drevet, D. Camel

Journal of Crystal Growth > 1997 > 181 > 1-2 > 145-159

The influence of thermal convection on the selection of microstructures is studied in directional solidification at low growth rates. Using the concept of solute boundary layer, the composition of the alloy at the different transitions between planar, eutectic and cellular fronts is predicted under a stationary regime and also in the presence of longitudinal macrosegregation. Furthermore, the appearance...

article

Diffusion and cluster formation in aqueous solutions of potassium aluminum sulfate

S. Kim, A.S. Myerson, M. Kohl

Journal of Crystal Growth > 1997 > 181 > 1-2 > 61-69

The property and structure of aqueous KAl(SO ₄ ) ₂ 12H ₂ O solutions were investigated by the measurements of diffusion coefficients and concentration gradients developed in vertical columns of supersaturated solutions. The diffusion coefficients decreased linearly with increasing concentration up to the saturation point and decreased more rapidly with increasing concentration...

article

Study of periodically poled Czochralski-grown Nd:Mg:LiNbO ₃ by chemical etching and X-ray microanalysis

I.I. Naumova, N.F. Evlanova, O.A. Gilko, S.V. Lavrishchev

Journal of Crystal Growth > 1997 > 181 > 1-2 > 160-164

Nd:Mg:LiNbO ₃ bulk single crystals with periodically poled ferroelectric domain structure were grown by Czochralski technique along [2 1 1 0] (X-axis) and along the normal to the face (0 1 1 2). The domain structure with period 4-30 μm was studied by selective chemical etching and metallographic microscope. The distribution of the impurities along the growth directions was measured by wave...

article

Primary spacing selection of Cu-Mn alloy under laser rapid solidification condition

Q.Y. Pan, W.D. Huang, X. Lin, Y.H. Zhou

Journal of Crystal Growth > 1997 > 181 > 1-2 > 109-116

In order to investigate the primary spacing selection under rapid solidification conditions, laser surface rapid resolidification experiments have been performed on Cu-26.6 wt.% Mn alloy. By taking transverse and then longitudinal sections of the directional growth dendrites/cells in the laser traces, the average primary spacing, spacing distribution range as well as the corresponding growth rate...

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Segregation during horizontal Bridgman growth under an axial magnetic field

A.C. Neubrand, T. Alboussière, R. Moreau, J.P. Garandet

Journal of Crystal Growth > 1997 > 181 > 1-2 > 133-144

Solute segregation in a dilute metallic alloy is investigated during horizontal Bridgman growth. Experiments have been carried out under a permanent uniform axial magnetic field of intensity up to 1.35 T. The field is seen to have a moderate effect on axial segregation. A 2D model for segregation is presented and solved both numerically and in terms of order of magnitude analysis. Accounting for the...

article

Carbon and silicon doping in GaAs and AlAs grown on (3 1 l)-oriented GaAs substrates by metalorganic chemical vapor deposition

K. Tateno, C. Amano

Journal of Crystal Growth > 1997 > 181 > 1-2 > 33-40

We have investigated carbon (C) and silicon (Si) doping characteristics in GaAs and AlAs grown on (3 1 1)A and (3 1 1)B-oriented GaAs substrates by metalorganic chemical vapor deposition (MOCVD) and compared them to those on (1 0 0)-oriented substrates. For C doping in both GaAs and AlAs with CBr ₄ , the order of the hole concentration is (3 1 1)A ≥ (1 0 0) > (3 1 1)B at V/III < 60....

article

Characterization of defect structures in magnetic liquid encapsulated Kyropoulos grown InP single crystals

H. Chung, W. Si, M. Dudley, D.F. Bliss, more

Journal of Crystal Growth > 1997 > 181 > 1-2 > 17-25

Synchrotron White Beam X-ray Topography (SWBXT) has been used as a nondestructive diagnostic technique for the characterization of defect structures in large wafers cut from S and Fe-doped InP single-crystal boules. Wafers cut both longitudinally and laterally with respect to the growth axis were studied in order to reveal the overall defect distribution in the boules. Studies carried out on longitudinally...

INFONA - science communication portal

Journal of Crystal Growth

Crystal growth and optical propertiesof Ti ³ ⁺ : YAl ₃ (BO ₃ ) ₄ and Ti ³ ⁺ : GdAl ₃ (BO ₃ ) ₄

Transition of octacalcium phosphate to hydroxyapatite in solution at pH 7.4 and 37°C

Crystallographic analyses of lysozyme and collagenase microgravity grown crystals versus ground controls

Silicon doping of InGaAs grown by MOVPE using tertiarybutylarsine

Crystallogenesis studies in microgravity with the Advanced Protein Crystallization Facility on SpaceHab-01

In situ and real-time observation of the formation and dynamics of a cellular interface in a succinonitrile-0.5 wt% acetone alloy directionally solidified in a cylinder

Growth of ZnO single crystal thin films on c-plane (0 0 0 1) sapphire by plasma enhanced molecular beam epitaxy

Oxygen nonstoichiometry in copper iron oxide [CuFeO ₂ ₊ _δ ] single crystals

Influence of substrate misorientation on quality of active region and performance of GaAs/AlGaAs triple-quantum-well lasers grown by molecular beam epitaxy

Study of Zn diffusion into CaSb from the vapour and liquid phase

Oxygen solubility in Si melts: Influence of boron addition

Influence of convection on the selection of solidification microstructures at low growth rates

Diffusion and cluster formation in aqueous solutions of potassium aluminum sulfate

Study of periodically poled Czochralski-grown Nd:Mg:LiNbO ₃ by chemical etching and X-ray microanalysis

Primary spacing selection of Cu-Mn alloy under laser rapid solidification condition

Segregation during horizontal Bridgman growth under an axial magnetic field

Carbon and silicon doping in GaAs and AlAs grown on (3 1 l)-oriented GaAs substrates by metalorganic chemical vapor deposition

Characterization of defect structures in magnetic liquid encapsulated Kyropoulos grown InP single crystals

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