The good properties of Ti silicides thin film are obtained using Ti metallic ions implantation into silicon. It is found from channelled low angle emergence measurements with high depth resolution power that the structure of implanted region consists of three layers with different lattice distortion density: the synthetic continuous polycrystal titanium silicides layer with thickness of 100 nm to 120 nm is the surface layer. The lattice distortion ratio is 45%. Intermediate layer is the high density of defects layer with thickness of 200 nm, the lattice distortion ratio is the highest as 77%. The lattice distortion ratio decreases with increasing of depth. The third layer with thickness of 200 nm is low density of defects. The ion flux exerts an influence on the structure.