We present the growth and characterization of InAs quantum dots on Al x Ga 1− x As surfaces for intersubband devices. This requires the quantum dot energy levels in the Al x Ga 1− x As matrix to be above the GaAs bandedge. Using standard As 4 fluxes (beam equivalent pressure 8e−6Torr), inhomogeneous broadening of the quantum dot size distribution increases with increasing Al content in the Al x Ga 1− x As matrix. Reducing the As 4 overpressure during In deposition is found to greatly improve the size distribution of the quantum dots, while producing slightly larger dots and a reduction in the density of small dots (h<1.3nm). Annealing at the higher standard As 4 flux for 30s, after the reduced As 4 In deposition, produced a negligible change in the quantum dot size distribution. Utilizing surface dots on top of 30 layers of self-assembled quantum dots, the maximum quantum dot height for ground state energies above the GaAs bandedge is determined to be 2nm for Al 0.30 Ga 0.7 As and 3nm for Al 0.45 Ga 0.55 As.