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Initial oxidation of 6H-SiC(0 0 0 1¯)-(2×2)C surface was studied at different conditions by photoelectron spectroscopy using synchrotron radiation (SRPES). Oxidation process is performed at room temperature and at 800°C under different oxygen pressures. It was found that oxygen atoms prefer bonding with the bilayer silicon atoms located below the top surface, while the topmost adatoms are hardly oxidized...
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