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This paper presents the electro-optical, chemical and structural properties of doped-ZnO films deposited by DC-reactive magnetron sputtering at room temperature using the bi-dopant Al and Mn. A minimum resistivity of 3.46x10 -4 Ωcm, exceeding 75.0% average transmittance (380-800nm), and fundamental band gap of 3.48+/-0.01eV have been obtained. XPS analyses show that Zn uniformly remains...
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