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Zinc oxide (ZnO) thin films have been prepared by pulsed laser deposition (PLD) technique at room temperature on quartz and single crystal silicon (100) substrates. The oxygen ambient gas pressure was attained at 6Torr during the deposition. The deposited films were post-growth annealed in air at various annealing temperatures for 30min. The X-ray diffraction (XRD), optical and electrical properties...
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