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Epitaxial SiGe layers and Si/SiGe modulated heterostructures were successfully grown on GaAs substrates by chemical vapor deposition (CVD) techniques utilizing an amorphous-Si:H buffer layer as a transition layer between SiGe and GaAs. Fourier transform infrared spectroscopy (FTIR) and transmission electron microscopy (TEM) were used to investigate the structural quality of the SiGe layers on GaAs...
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