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We investigated the partial decomposition of GaN layers grown in an atmospheric pressure metal organic vapor phase epitaxy (AP-MOVPE) vertical reactor at 1200 °C under N2 ambient. In these conditions, the early stages of GaN thermal decomposition were studied. The GaN decomposition was monitored by in-situ laser reflectometry (LR). The properties of the as grown and decomposed GaN samples were analyzed...
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