Two types of bipolar resistive switching (RS) model were revealed respectively, before and after electroforming in the α-Fe2O3 films fabricated by ultrasonic spray pyrolysis on fluorine-doped SnO2 conducting glass. The current-voltage curves of cell before and after electroforming were fitted. The conduction mechanism at high resistance state of the model before electroforming was attributed to Schottky emission, whereas after electroforming it can be explained by space-charge-limited conduction. These two types of RS model originate from interface and bulk effect, respectively. The retention of the cells with different RS models was studied comparatively and the possible mechanism was discussed.