Thin films of different Pd–S phase, namely Pd 4 S, PdS and PdS 2 , have been reproducibly grown by the sulfurization of Pd films deposited on native oxide of (111) Si substrates by radio frequency sputtering method. In order to achieve controlled sulfurization, a three-stage sulfurization setup consisting of evaporation chamber, activation chamber and sulfurization chamber has been developed. The sulfurization of Pd films (kept at a constant temperature of 500°C) was carried out using sulfur vapors activated to different temperature between 550 and 700°C. The results of X-ray diffraction and X-ray photoelectron spectroscopy measurements show that formation of Pd 4 S, PdS and PdS 2 phases takes place for the activation temperatures of 550, 600 and 700°C, respectively. The room temperature resistivity of Pd, Pd 4 S, PdS and PdS 2 were found to be respectively 0.1, 15.9, 15,000 and 20,000μΩ cm. The temperature-dependent electrical resistivity measurements showed metallic conduction for Pd and Pd 4 S films. The Seebeck coefficient measured at 300K for these Pd–S phases showed their n-type conducting behavior.