The electronic and photovoltaic properties of hybrid organic photodiodes based on n-Si/boric acid doped polyaniline (PANIB) and n-Si/2,3,7,8,12,13,17,18-octakis(2′-aminophenylsulfanyl)-substituted-nickel(II) phthalocyanine:boric acid doped polyaniline (PANIB-PC) composite have been investigated. The current–voltage characteristics of the n-Si/PANIB and n-Si/PANIB-PC diodes were analyzed under dark and illumination conditions. The open circuit voltage, V oc and short circuit current, I sc values for the n-Si/PANIB and n-Si/PANIB-PC diodes under 105mW/cm 2 were respectively found to be 0.280V, 6.19nA and 0.304V, 0.091nA. The fabricated inorganic/organic devices can be used as an optical sensor for optoelectronic applications.