Cd doped Tl-2223 thin films ( 1 μm) have been grown by annealing B 2 Ca 2 Cd x Cu 3 O y (x = 0.0, 0.1, 0.2, 0.3) precursor films, deposited on MgO (100) by ultrasonic spray pyrolysis, in Tl 2 O ambient in an evacuated (> 10 - 5 Torr) sealed quartz tube at 890°C for 2 h. Doping by Cd has been found to induce the growth of 2223 phase and an enhancement in T c . The T c of the as-grown thin films samples are 118 K, 120 K, 124 K and 121 K respectively for Cd contents x = 0.0, 0.1, 0.2 and 0.3. The observed T c = 124 K for x = 0.2 is higher than the previously observed highest T c of 122 K for Tl-2223 thin films. A distinguishing feature of the present synthesis route is the fact that oxygen has not been used at all in the entire synthesis process. The transport J c of the 0.2 Cd doped film is 1.12 10 5 A/cm 2 (77 K, 0 T). The surface morphology of these films shows a very dense growth of platelet-like grains.