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TiO 2 -SiO 2 films (Ti/Si=1:1) have been prepared by the sol-gel method. The structure and photoluminescence (PL) properties of the films heat-treated at different temperatures have been investigated. The films appear composed of TiO 2 nanocrystallites in anatase form embedded in SiO 2 -rich matrix. Emission bands are observed in all the heat-treated films. This PL is attributed to various defects resulting from thermal treatment and crystallization of TiO 2 and to energy levels in the mixed oxide matrix.