The E-V energy transfer from electronic excited states of F centers in CsBr to the vibrational modes of OD − impurities is studied with Raman scattering. It was found that even in unaggregated samples, with statistically distributed defects separated by fairly long distances, a strong E-V transfer exists. For moderate OD − -concentrations (≈ 10 −4 ) its efficiency is almost 100%, similar to the one found for the next nearest 〈100〉-neighbor F H (OH − )-complex. Simultaneously, impurities or impurity pairs which have captured an extra electron are detected even at lowest temperatures. This is clear evidence that electron transfer occurs as well and suggests interrelation between the two transfer processes.