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A thorough investigation on the threshold voltage temperature coefficient (TVTC) in MOS transistors is carried out. The TVTC behavior is analyzed in both conventional MOSFETs with uniformly-doped channel (UDC) and double-diffused devices (DMOS). First, a survey of analytical TVTC models proposed in literature for UDC MOSFETs is presented. Due to the need of simple TVTC expressions also for power devices,...
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