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Aluminum-induced crystallization of Si is achieved on crystalline Si substrates in a manner that produces near-ideal p + n diodes for centimeter large sizes. A layer-stack of physical-vapor-deposited materials, amorphous Si on aluminum, is inverted at an anneal temperature of 400°C to form a monocrystalline p-doped Si layer by solid-phase epitaxy (SPE). The stages of the crystallization process...
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