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This study focuses on studying the effective electron mobility in direct contact La-silicate/Si structure based nMOSFETs and searching for the difference of the mobility characteristics compared with the SiO 2 MOSFETs. In this study, three types of gate electrode structure were prepared to investigate the mobility characteristics over a wide EOT range; W for EOT of 1.63nm, TiN/W for EOT of...
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