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DC and pulsed transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) have been systematically investigated. A significant difference of transconductance linearity between DC and gate-pulsed measurements is clearly observed. The acceptor-like traps in the barrier layer under the gate is the main cause of non-linear behavior of AlGaN/GaN HEMTs transconductance. A physical model...
In this paper, we have fabricated and characterized In0.7Ga0.3As quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs). We have employed the gate dielectric of the Al2O3/HfO2 (0.6/2nm) bi-layer stack by ALD. The fabricated device with Lg=4μm exhibits a record maximum transconductance (gm_max) in excess of 520μS/μm at >1μm region, and reasonably good electrostatic integrity,...
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