The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this work, strained Si (sSi) nanowire array of n-TFETs with gates all around (GAA) yielding ON-currents of 5μA/μm at a supply voltage Vdd=0.5V are presented. Tilted ion implantation with BF2+ into NiSi2 dopant has been used to form a highly doped pocket for the source to channel tunneling junction. These devices indicate sub-threshold slopes (SS) below 60mV/dec for Id<10−4μA/μm at Vds=0.1V at...
Surface-grafting conducting polymer has advantage to circumvent the difficulty in patterning as well as the weak interface adhesion on substrate of the conventional conducting polymer, which would be desirable for its application as electrodes in electronic devices. In this work, the patterned surface-grafting polypyrrole (PPY) is used as electrode, which shows merits such as strong interface adhesion,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.