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In this article, we demonstrated the fabrication and characterization of 395nmGaN ultraviolet light-emitting diodes grown on patterned sapphire substrates. The current confining aperture is designed as 45, 55, 65, 75 and 85μm. The indium tin oxide (ITO) was used as a current spreading layer. Use the metals of nickel and gold to form ohmic contact with P-AlGaN layer prior to dry etching. The 45-μm-diameter...
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