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A novel Schottky barrier silicon-on-insulator metal-oxide-semiconductor field-effect transistor featuring metallic source/drain and an electrical drain junction has been fabricated and characterized. The formation of electrical drain junction, or the field-induced drain (FID), is controlled by a metal field-plate overlying the passivation oxide. Excellent ambipolar operation is demonstrated on the...
A thermal sensor built from a silicon resistor with a simple rectangular layout structure on thin-film (0.1 μm) silicon-on-insulator (SOI) substrate is studied and compared with those on thick-film (10 μm) SOI and bulk (450 μm) Si. Besides supporting the theory of minority-carrier exclusion effect through one-dimensional highly confined carrier transport in the ultra-thin rectangular silicon film,...
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