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A comprehensive investigation of the reverse-bias safe operation area (RBSOA) of large area MOS controlled thyristor (MCT) and insulated gate bipolar transistor (IGBT) was performed and results are reported in this paper. Multi-cell devices turn-off failure due to non-uniform gate delay was first investigated. Fundamental device characteristic difference between MCT and IGBT was discussed. It is found...
Large size (i.e. 1 mmx1 mm) high power nitride-based light emitting diodes (LEDs) with Ni/Au and Ni/indium tin oxide (ITO) p-contacts were fabricated. It was found that the 200 mA forward voltage was 3.19 and 3.3 V for the power LEDs with Ni/Au and Ni/ITO p-contacts, respectively. On the other hand, although the 200 mA output power was only 11.59 mW for the power LED with Ni/Au p-contact, the 200...
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