The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A conventional formula for the total emitter-to-collector transit time (τ ec ) or the short circuit current gain cut-off frequency (f T ) in heterojunction bipolar transistor (HBT) has been modified to include the effects of the intrinsic emitter dimensions (width, length, area) and the extrinsic parasitic components. The formula shows how the emitter dimensions and the device...
A common-emitter equivalent circuit model which represents both the self-heating and the current collapse as feedback from the collector current to the base-emitter voltage is developed for multi-finger InGaAs/GaAs HBTs. The modified Ebers-Moll model is verified by comparing the simulated and measured results. Good agreement is also achieved for the scattering parameters and I-V characteristics confirming...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.