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In general, closer proximity of embedded SiGe (eSiGe) source drain (S/D) structure to the channel improves p-channel metal oxide semiconductor field-effect transistor (pMOSFET) performance because of the higher stress in the channel. However, we found the critical optimization methodology which has a relation between boron diffusion modulation in SiGe and short channel effect (SCE) in the context...
Stress distributions in the Si channel regions of silicon-based alloy source/drain and stressed silicon nitride liner NMOSFETs with various widths were studied using 3D TCAD simulations. For strained Si NMOS, drive current enhancement was found to be dominated by tensile stress along the transport direction (S xx ), and compressive stress along the growth direction (S zz ) in larger...
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