The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Heavy B atomic-layer doping is performed by B atomic-layer formation on Si(100) using B 2 H 6 and subsequent Si capping layer deposition using SiH 4 . By B 2 H 6 exposure on Si(100) at 180°C, the B atom amount tends to saturate self-limitedly at around 1.4×10 15 cm −2 (two atomic layers (AL)). In the case of exposure at 500°C, the B atom amount...
High-concentration in-situ boron-doping technique has been successfully developed to fabricate an ultra-shallow base layer of SiGe HBTs. Extremely high-concentration doping with abrupt profiles in the Si/SiGe layers can be achieved without high-temperature activation annealing, and good crystallinity of the grown layer has been obtained. Too high boron-doping has an impact on the crystallinity and...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.