The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Epitaxial growth of Si:C, Si or SiGe in the cavity formed by selective vapor phase etching of sacrificial SiGe layer by HCl using a RPCVD system was investigated. The sacrificial SiGe layer was etched with very high selectivity. Epitaxial Si was deposited into the selectively etched cavity by non-selective and selective deposition processes. Weak strain contrast was observed by TEM at the interface...
Selective epitaxial growth (SEG) of Si 1−x Ge x layers on patterned substrates containing isolated, grouped and global chips has been investigated. The interaction between chips on a wafer was studied, and the results are explained by kinetic gas theory for CVD techniques. A test pattern was designed with a series of grouped chips to calibrate the pattern dependency of SEG (both...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.