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Random Telegraph Noise (RTN) is one of the main reliability problems of resistive switching-based memories. To understand the physics behind RTN, a complete and accurate RTN characterization is required. The standard equipment used to analyse RTN has a typical time resolution of ∼2ms which prevents evaluating fast phenomena. In this work, a new RTN measurement procedure, which increases the measurement...
Random Telegraph Noise (RTN) has been studied in Ultra-Thin Fully-Depleted Silicon-On-Insulator transistors. A modified Time Lag Plot algorithm has been used to identify devices with a single active trap. The physical characteristics of the trap have been extracted based on Shockley–Read–Hall models, revealing the possible trends of capture and emission times of the trap according to its physical...
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