Using a new means of impurity doping applying the bias method, Boron, Nitrogen and Titanium were doped into a diamond film. The results indicate that the crystallinity of the films obtained by the proposed method is very high, and impurities can be doped uniformly into the diamond films. Also, high activation of Boron was confirmed; the Hall mobility of the film reached approximately 1000 cm 2 /V . s. The application of this method in various fields is expected in the future.