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(TiO 2 ) x (Ta 2 O 5 ) 1-x (x is up to 0.45) films deposited by a remote plasma atomic layer deposition (ALD) are reported in this work. The growth rates of the ALD films measured by ellipsometer are in a range of 0.8-1.06Å/cycle at a deposition temperature of 300°C, depending on Ti/(Ti+Ta) ratio. In order to evaluate the high-k materials of Ti-doped Ta ...
As the most potential next-generation display technology, SED(Surface-conduction Electron-emitter Display) whose independent electron emission character and good image quality draw much attention. Because of the higher emission efficiency than ZnO or PdO in the same craftwork, W-Si-N was selected as electron emitter material applied in SED. In this work, we developed SED with W-Si-N electron emitter...
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